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Information × Registration Number 0218U002358, 0113U002481 , R & D reports Title Investigation of optical properties of layered semiconductor crystals and structures doped and intercalated by impurity of atoms and molecules. popup.stage_title Head Zhirko Yu.I., Registration Date 16-02-2018 Organization Institute of physics NASU popup.description2 Objects of research: layered semiconductor Bridgeman grown bulk In2Se3 crystals, as well as InSe and GaSe crystals intercalated: electrochemically - by Li, Na and hydrogen atoms; naturally - by hydrogen containing molecules (H2O, C7H8, C2H5OH); in melt of RbNO3, NaNO3 ferroelectric salts. The purpose of job: to research of optical properties of layered A3В6 semiconductor crystals and structures with the purpose of development contemporary semiconductor element base, namely solid-state storages for hydrogen and electric charge; to research of physical bases of management of optical and electronic properties of layered А3В6 crystals at doping, intercalating (deintercalating) by atoms and molecules; to study of the physic-chemical processes proceeding in mentioned crystals at intercalating them by atoms, organic or inorganic molecules. Methods of research: low-temperature (T = 5 - 300 K) spectral optical (in region from 0.2 to 10.0 mkm), SEM, EDX researches. In job the results of optical and SEM researches; EDX, and low-temperature optic-spectroscopy researches of layered In2Se3 semiconductor crystals as well as InSe and GaSe crystals intercalated: electrochemically - by Li, Na and hydrogen atoms; naturally - by hydrogen containing molecules (H2O, C7H8, C2H5OH); in melt of RbNO3, NaNO3 ferroelectric salts. With use of the described methods for the first time physic-chemical and optical properties of In2Se3 crystals, as well as hybrid structures consisting of InSe and GaSe crystal intercalated by atoms or organic and inorganic molecules are experimentally investigated. The results of job will have the large meaning during development of solid state hydrogen and electric charge devises as well as up to date semiconductor element base consisted of layered hybrid structures. Product Description popup.authors Грехов Василь Михайлович Жирко Юрій Іванович Скубенко Микола Андрійович Томашук Анатолій Євгенович popup.nrat_date 2020-04-02 Close