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Information × Registration Number 0218U005459, 0116U006351 , R & D reports Title Research and implementation of radiation technologies reactor WWR-10M INR NASU for radiation-resistant materials with improved properties. popup.stage_title Head Litovchenko Piotr. G., Registration Date 05-12-2018 Organization Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine popup.description2 Object of research - radiation technologies of neutron-transmutation doping for to receive material with a high uniformity distribution of resistivity. The purpose of the work is the development and implementation of promising radiation technologies at the WWR-10M reactor of the INR NAS of Ukraine. Research methodology - the promising technology is neutron-transmutation doping of semiconductor materials, which allows to obtain silicon with the best properties. The defining material used in microelectronic technology is neutron-transmutation silicon. Introduced radiation technologies at the WWR-10M reactor of the INR NAS of Ukraine. To obtain silicon with a high homogeneity of the distribution of boron impurity, the method of neutron transmutation doping in the channels of the WWR-10M reactor was implemented. It was found that the most optimal for neutron-transmutation doping are the channels: VEK-29/60M, VEK-TK3 and GEK-6. The share of thermal neutrons in these channels is greatest in comparison with other channels (significant softening of the spectrum), so in VEC-29/60 - 80%, VEC-TK3 - 98%, GEK-6 - 75%, which is very important for fulfilling neutron-transmutation doping. The measurements and calculations of the distribution of thermal neutrons in the channel VEC-29/60M are carried out. It is shown that the distribution of the heat neutron flux at a distance of 125 mm from the center of the reactor core in both directions allows for neutron doping of silicon with sufficient accuracy. The irradiation of samples of silicon in channels: VEK-29/60M, VEK-TK3 and GEK-6 WWR-10M reactor were fulfilled. .The method of cleaning the surface of the initial and irradiated samples of silicon for annealing of radiation defects is developed. The modes of annealing of radiation defects of irradiated samples of silicon have been determined. The obtained samples of compensated high-resistance neutron-doped silicon n-type irradiated in the vertical channel TK-3 are suitable for the production of E-detectors with wide thicknesses of the sensitive region. The obtained samples of high-resistivity neutron-doped p-type silicon were irradiated on the channel ГК-6 necessary for the manufacture of photodetectors on the software "Rhythm" of Chernivtsi. The obtained samples of low- resistivity neutron-doped silicon n-type irradiated in the vertical channel 29/60 are suitable for use in the production of power semiconductor technology. It is important implementation of the developed radiation-thermal technology, which will increase the radiation hardness of silicon, which will be used in objects with high radiation levels, namely, at nuclear power facilities and accelerators of nuclear particles. Keywords - nuclear reactor, vertical and horizontal channels, neutron flux density, device, annealing. Product Description popup.authors Варніна Валентина Іванівна Волох Олексій Пилипович Ластовецький Володимир Францевич Макуха Олександр Миколайович Петренко Ігор Віталійович Тартачник Володимир Петрович Шевель Валерій Миколайович popup.nrat_date 2020-04-02 Close