Search academic texts

Information × Registration Number 0218U006306, 0115U004728 , R & D reports Title Investigation of electro-physical and optical properties of semiconductors and semiconductor structures. popup.stage_title Head Tulupenko Victor N., Registration Date 17-04-2018 Organization Donbass State Engineering Academy popup.description2 The object of research is silicon germanium Si08Ge02/Si/Si08Ge02 quantum wells delta-doped with shallow impurities. The subject of research is the search for optimal conditions for the re-construction of the energy spectrum of quantum wells by ionization of the delta layer of impuri-ties with the presence of additional (background) doping of barriers.. Methods are self-consistent solution of Schr?dinger and Poisson equations. It is shown that background impurities do not strongly influence the binding energy of the impurities of the delta layers located both in the cen-ter and on the edge of the QW. This effect is also not noticeable in changing the difference be-tween the pairs of energy levels for the center delta doped QW. At the same time, for edge delta-doping, this change can be very significant and reach 50% for some pairs of levels of spatial quantization. These changes can be reflected in the optical properties of heterostructures and, thus, can be used in some optical devices built on the basis of delta-doped QW. Product Description popup.authors Білих Валерій Георгійович Васильєва Ірина Вікторівна Демедюк Роман Олександрович Костенко Володимир Михайлович Тулупенко Віктор Миколайович Фоміна Оксана Сергіївна popup.nrat_date 2020-04-02 Close