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Information × Registration Number 0218U100057, 0118U006155 , R & D reports Title The influence of solvent metals on the optical and structural properties of GaN monocrystals growth by crystallization from a solution in transition metals (Fe, Co, Cr) under high temperature and high pressure conditions popup.stage_title Head Strelchuk Viktor , Доктор фізико-математичних наук Registration Date 21-12-2018 Organization V. Lashkaryov Institute of semiconductor physics popup.description2 The influence of iron solvent on the optical, electronic and structural properties of GaN crystals synthesized from Ga-Fe-N solution under high pressure and high-temperature conditions was investigated. The melting temperature of Fe and Fe+Ga alloy was determined under high-pressure nitrogen conditions, and the solubility of nitrogen was established. The high crystalline quality of the wurtzite structure of newly synthesized GaN crystals and low free electron concentration is shown. It is demonstrated that the structure of their band edge emission is dominated by the recombination of excitons bound on typical non-intentional donor impurities of GaN (Si and O). The registration of the yellow and blue luminescence bands is due to the deep acceptor levels of gallium vacancies and Mg impurities, respectively. The incorporation of Fe in the GaN crystal lattice is confirmed by the registration of Fe3+ intra-center emission in the near infrared range. The variation in the intensity, shape, and position of the Fe-induced band in different GaN crystals is due to the inhomogeneous incorporation of Fe, as well as the formation of defect complexes at high iron concentration. Product Description popup.authors popup.nrat_date 2020-04-02 Close