Search academic texts

Information × Registration Number 0218U100075, 0118U006176 , R & D reports Title Structural, electronic and optical properties of gallium nitride with functional Mn-Mgk cationic complexes and iron centers. popup.stage_title Head Tsykaniuk Bogdan I., Registration Date 26-12-2018 Organization V. Lashkaryov Institute of semiconductor physics popup.description2  The study of structural, electron and optical properties of gallium nitride with functional cationic complexes Mn-Mgk and valence centers was carried out. The analysis of the spectra of the resonant combination scattering of light at room temperature of samples (Ga, Mn) N: Mg showed no excitation at 2.4 eV of resonance amplification of manganese-induced phonon modes, but the amplification was observed in the region of lower excitation energies. Analysis of the results of the measurement of intraocular luminescence for GaMnN: Mg samples showed that with an increase in the Mg / Mn ratio, the intensity of infrared radiation that is associated with the center of Mn5 increases. The analysis of the temperature dependence of the solubility of GaN in Fe in the temperature range 1370-1480 ° C at a constant pressure of 1 GPa showed that the solubility of GaN in Fe increases with temperature and falls within the range of 22-30 at.% For each component in the temperature range of 1370-1480 ° C, respectively. Studies of new GaN crystals grown from Fe solutions in the gas pressure reactor by Raman spectroscopy have shown that the material has a high crystalline quality of the wurtzite structure of the newly synthesized GaN crystals as well as a low free electron concentration. Product Description popup.authors popup.nrat_date 2020-04-02 Close