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Information × Registration Number 0219U000027, 0115U005017 , R & D reports Title Terahertz properties of semiconductor nanostructures with high carrier mobility to create radiation detectors. popup.stage_title Head Sizov F.F., Доктор фізико-математичних наук Registration Date 09-01-2019 Organization Institute of Semiconductor Physics popup.description2 The project is aimed at studying the possibilities of creating wide-spectral photodetectors in the range of sub-THz / THz / IR radiation on the basis of nanostructures and layers by solving a fundamental problem, namely, determining the physical properties of sensitive elements of layer-based detectors and nanodimensional structures based on CdhHg1-xTe . The aim of the work is to develop theoretical and practical recommendations for the creation of photodetectors in the range of sub-THz / THz / IR radiation with a wide spectral sensitivity in IR, THz and sub-Tgz bands. At present, there are no uncooled or moderately cooled detectors of this spectral range, both in Ukraine and in the world. At this stage, sensitive elements of IR and THz detectors based on the field transistor and bolometer based on the HgTe quantum well and the composite nanostructure on the basis of the triple semiconductor compound (CdHgTe) with metal-oxide Ag2O were investigated. Based on its own shielding function, for the HgTe QY, the plasmon frequencies of the electronic subsystem at the temperature of liquid nitrogen are calculated. These data are important for the creation of receivers capable of operating at frequencies of 0.5-10 THz. It has been shown that the HgCdTe QW with an inverted band structure used as a channel for a THz bolometer at T = 77K can provide high speed of the detector coupled with high sensitivity and low noise and have significantly better performance than graphene. The elements of technology for the creation of a new composite semiconductor material with metal oxide (Ag2O) inclusions integrated into the nanostructured layer of the triple compound CdHgTe are developed. In the obtained hybrid nanoheterostructures p - (Ag2O-Hg1-xCdxTe (x ~ 0.22)), the photodigraph was detected in the near-wavelength and medium-wavelength infrared bands of the spectrum and sub-terahertz range. Product Description popup.authors Гуменюк-Сичевська Жанна Віталіївна Забудський Вячеслав Володимирович Мележик Євген Олександрович Сахно Микола Вадимович Сизов Федір Федорович Смірнов Олексій Борисович Цибрій Зеновія Федорівна Шевчик-Шекера Анна Володимирівна popup.nrat_date 2020-04-02 Close
R & D report
Head: Sizov F.F.. Terahertz properties of semiconductor nanostructures with high carrier mobility to create radiation detectors.. (popup.stage: ). Institute of Semiconductor Physics. № 0219U000027
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Updated: 2026-03-25