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Information × Registration Number 0219U000217, 0117U006195 , R & D reports Title Structure investigation of ion-modified heteroepitaxial systems AlGaN-GaN for nano- and optoelectronic devices popup.stage_title Head Stanchu Hrihorii Viktorovich, Registration Date 24-01-2019 Organization Institute of Semiconductor Physics popup.description2 Regularities of depth dependence deformations and composition for ion-implanted GaN layer and composition-gradient AlxGa1-xN layer. Method of X-ray diffraction curves modelling using semikinematic model of diffraction in reflection geometry for ion-implanted layers was proposed. Fitting method based on algorithm of searching the minimum of Hooke-Jeeves function to obtaine deformation profile of implanted layer was developed. Implantation and measurements of X-ray diffraction curves for such structures was carry out. Product Description popup.authors Кривий Сергій Борисович Любченко Олексій Ігорович popup.nrat_date 2020-04-02 Close