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Information × Registration Number 0219U000567, 0118U003046 , R & D reports Title Investigation of delta-doped nanostructures in order of creation of re-tuned by electric field the active and passive devices in the THz range. popup.stage_title Head Tulupenko Viktor M., Registration Date 07-02-2019 Organization Donbass State Engineering Academy popup.description2 Object of research: Tensed due to inconsistency of crystalline lattice silicon (Si) delta-doped quantum wells with silicon-germanium Si0.8Ge0.2 barriers. The purpose of the study: To determine the influence of the background, and at the same time the intentional, doping of barriers to the restructuring, first of all, of the first energy levels of spatial quantization in delta-doped quantum wells. Theoretical results: On the example of the background doping of the barrirrs, it is shown that it is possible to obtain an elevated (up to two times) electron concentration in quantum wells by ionizing the background impurities. Since electrons, first of all, fall into the first levels of spatial quantization, this results in an increase in the coefficient of intersubband absorption by such a structure. Along with the change in the structure of these first levels due to the ionization of the delta layer, this is of great importance for the construction of a tuned photodetector of infrared, and which is extremely important, of the terahertz range of the spectrum. Novelty: based on the author's original idea of the influence of ionization of the delta layer on the energy of ionization of impurities of the same delta layer and on the reconstruction of the first energy levels of spatial quantization in the quantum well/ Evidence of the novelty of developments is a large number of publications by the authors in the leading English-language scientific journals in the world. Product Description popup.authors Васильєва Ірина Вікторівна Демедюк Роман Олександрович Сущенко Дмитро Георгійович Тулупенко Віктор Миколайович Фоміна Оксана Сергіївна popup.nrat_date 2020-04-02 Close
R & D report
Head: Tulupenko Viktor M.. Investigation of delta-doped nanostructures in order of creation of re-tuned by electric field the active and passive devices in the THz range.. (popup.stage: ). Donbass State Engineering Academy. № 0219U000567
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Updated: 2026-03-27