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Information × Registration Number 0219U001142, 0117U006196 , R & D reports Title Structuring heteroepitaxial systems HgCdTe/CdZnTe by radiation Ag+ ions for IR and MM detectors popup.stage_title Head Udovitska Ruslana Serhiivna, Registration Date 16-01-2019 Organization Institute of Semiconductor Physics popup.description2 Experimental specimens are made by bombarding Ag + semiconductor target ions (in the geometry of the oblique drop of ion beam at an angle ( 45 °). The results of the complex study of the properties of the hybrid structure p - (Ag2O-Hg1-xCdxTe (x ~ 0.2)) synthesized on the basis of nanoscale inclusions of silver compounds in the CdHgTe matrix are presented. The penetration of Ag + ions in the CdHgTe target stimulates the formation of a layer (100 nm) of a nanostructured three-component compound (CdHgTe) with metal oxide (Ag2O) inclusions. The method of Impedance Spectroscopy (EIS) revealed the dominant inductive properties of a layer synthesized on the surface of CdHgTe with Ag2O inclusions. It was recorded that samples of a CdHgTe-based semiconductor composite with metal-oxide (Ag2O) inclusions expanded the region of spectral sensitivity of the main semiconductor of infra-red technology (IR range) to a subTHz portion of the spectrum. From a practical point of view, the nanostructured surface of a semiconductor with metal-oxide (Ag2O) inclusions plays the role of lumped components (inductors, capacitors and resistors) that play the role of resonators - active nanoparticles. To explain the physical principle of the antenna effect on the lumped reactive components, the model of akivian electric count with the Non-Foster harmonization is involved, using the inductive properties of the nanocomposite. A quantitative and qualitative analysis of the chemical compounds of Ag in the matrix Hg1-xCdxTe (x ~ 0.22) was performed using AFM, XPS spectroscopy and Raman spectroscopy (RS). Product Description popup.authors Удовицька Руслана Сергіївна popup.nrat_date 2020-04-02 Close