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Information × Registration Number 0219U001997, 0115U003848 , R & D reports Title Development and creation of technologies for the cultivation of monocrystalline semiconductor compounds A2B6 and A3B5 for electronic equipment popup.stage_title Head Vasil Tomashyk, Доктор хімічних наук Registration Date 08-04-2019 Organization Institute of Semiconductor Physics popup.description2 The purpose of the project is to develop technological operations for the manufacture of IR radiation sensors for the spectral range of 1.5-3.5 microns and 3 to 5 microns based on the diffusion InAs and InSb p-n transitions, respectively. Creation of technology for the manufacture of sensors of IR radiation of domestic production. Main tasks of the project: - Optimization of physico-chemical operations of formation of mirror-smooth surfaces of materials InAs, InSb without broken layer; - Designing and manufacturing of a technological unit designed for closed-beam diffusion processes in InAs, InSb; - Setting up the metrology of the main operating parameters and characteristics of infrared radiation sensors for the spectral range 1.5-5.5 ?m; - experimental search and optimization of technological regimes of diffusion of acceptor impurities into single-crystalline volumetric substrates of InAs, InSb n-type conductivity; - establishing the relationship between the technological regimes of manufacturing InAs, InSb p-n-junctions and their electrical and photoelectric parameters; - Production of experimental samples of infrared sensors based on InAs and InSb p-n-transitions and attestation of their main operating parameters and characteristics. The urgency and importance of the expected result of the project is to create in Ukraine technology for the manufacture of IR radiation sensors for spectral ranges of 1.5-3.5 microns and 3 to 5 microns based on diffusion pn transitions in InAs, InSb bulk monocrystalline material n type of conductivity. Compared to the ion implantation method or the molecular beam epitaxy, this technology does not require costly and rare process equipment, which will reduce the final cost of the sensed sensory elements manufactured. In addition, the use of beryllium as a dopant for ion implantation due to its harmfulness requires, in accordance with the rules of safety, the use of specially equipped facilities and special protective clothing with spacesuits. The state of developing a problem at the beginning of the work. The technology of making infrared radiation sensors based on InAs, InSb p-n-transitions in Ukraine was not available at the beginning of the work. In the commercial market, the main manufacturers of InAs, InSb photodiodes are Judson (USA), Hamamatsu (Japan), Infrared Associates, and Rockwell (USA), InfraTec (Germany), Sofradir (France), Sapfir Factory (Russia) , Chung-Chin Institute of Science and Technology (China), Orion NGO (Russia), Kidron MRC (Israel). The analysis of literary sources points to the intensive development of elements of InAs, InSb photodiode production technology in Iran and Turkey. Product Description popup.authors Ворощенко А.Т. Кравецький М.Ю. Луцишин І.Г. Сукач А.В. Томашик В.М. popup.nrat_date 2020-04-02 Close