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Information × Registration Number 0219U005087, 0118U004983 , R & D reports Title Electronic transport in advanced high-mobility thin-films organic semiconductors: from hopping to band-like mechanism. popup.stage_title Head Kadashchuk Andrey Konstantinovich, Registration Date 10-05-2019 Organization Institute of physics NASU popup.description2 The aim of the research project was the study of the electric characteristics and the peculiar properties of the current leaking in the thin films of organic semiconductor materials using an effective medium analytic approach for various situations of the electron-phonon interaction. In the issue, it is developed a generalized theoretical model for the description of hopping charge transport in the films of organic disordered semiconductors under any given carrier concentration, electric field strength and within the wide temperature interval, which considers both the single- and the multi-phonon processes for primitive activation transition of charge carrier among the transport sites. It was shown that at variance with the conventional classical concept of the entropy of multiple excitations, the macroscopic hopping charge transport in the real disordered systems turns out to be independent from the multi- or singlephonon character of activated transitions. For the first time, it was demonstrated that the energetic disorder completely erodes the compensation effect, which is determined by the Meyer-Neldel rule for the probability of the individual primitive activation transition of charge carrier, in the systems with Gaussian energetic disorder, but this effect arises if a disordered system contains a quite significant concentration of deep traps. These results are of principal significance for interpretation of the electric field and temperature dependences of charge carrier mobility in thin-film organic field-effect transistors. Product Description popup.authors Вахнін Олександр Юрійович Кадащук Андрій Костянтинович popup.nrat_date 2020-04-02 Close