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Information × Registration Number 0219U005639, 0119U001647 , R & D reports Title Elaboration of DLC/Cd(Zn)Te X/gamma detector with high-performance capability for environment monitoring popup.stage_title Head Savkina Rada, Registration Date 26-12-2019 Organization Institute of Semiconductor Physics popup.description2 At this stage, the effect of ion-plasma treatment on the surface of Cd1-xZnhTe single crystals (x ~ 0.04) during the deposition (DLC) of the coating of a diamond-like carbon film aC: H: N by plasma-chemical deposition was studied in the NDR. Processing CdZnTe with argon, hydrogen, and hydrogen plasma in one vacuum process of cleaning a semiconductor substrate before applying a DLC film showed the inert gas over light ions H + and N +. Argon during CdZnTe processing initiates noticeable changes in the morphology of the surface regions, which makes it possible to synthesize a multilayer system in this technological process of single-layer deposition of a DLC coating.. Product Description popup.authors Cавкіна Рада Костянтинівна Смірнов Олексій Борисович popup.nrat_date 2020-04-02 Close