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Information × Registration Number 0219U100501, 0118U001955 , R & D reports Title Development and creation of a new type of light-emitting diodes based on hybrid nanostructures with increased radiation efficiency popup.stage_title Head Korbutiak Dmytro V., Доктор фізико-математичних наук Registration Date 15-02-2019 Organization V. Lashkaryov Institute of semiconductor physics popup.description2  The research work at this stage is devoted to the development of the technology of synthesis of doped A2B6 nanocrystals and hybrid semiconductor-metal nanostructures with high intensity of photoluminescence. The object of the study are cadmium telluride nanocrystals doped with lanthanum, hybrid semiconductor-metal nanostructures CdTe-Au, CdTe-Ag. The purpose of the work is to develop and produce experimental samples of semiconductor-metal nanostructures with a high intensity of photoluminescence. Results of research - It has been established that in order to prevent the quenching of PL in the formation of heterostructures on the basis of nanoparticles (NPs) Au of different shapes and nanocrystals (NCs) CdTe, it is necessary to use an intermediate insulating layer (or any finite-length connecting element instead of an insulating layer), which will prevent the precipitation of Nd CdTe to free space in the Au NPs monolayer, separating the NCs semiconductor from metal plasmonic NPs. In contrast to semiconductor NCs and metal NPs which are inorganic in nature (except for surface ligands that provide solubility and stabilization of these nanobjects, as well as their functioning), separating material (spacer) that insulates semiconductor NCs from metal NPs, can be both inorganic and organic (in most cases, polymeric) material. The method of manufacturing of hybrid CdTe-Ag hybrid semiconductor-metal nanostructures with a high intensity of photoluminescence is developed. Product Description popup.authors popup.nrat_date 2020-04-02 Close