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Information × Registration Number 0219U100604, 0116U003514 , R & D reports Title Developing of technology and physical properties of narrow-gap and layered crystals for sensors and sources of terahertz and infrared radiation. popup.stage_title Head Kovaliuk Zakhar D., Registration Date 20-02-2019 Organization Chernivtsi Branch of Frantsevich Institute of Problems of Materials Science popup.description2  Objects of the study are multicomponent solid solutions of lead, tin and germanium tellurides, doped with impurities of transition elements, as well as indium and gallium selenides and heterostructures based on them. Purposes of the work are synthesis and fundamental studies of single crystals and heterostructures based on AIVBVI and AIIIBVI compounds suitable for exploitation in terahertz and infrared spectral regions. Research methods are the next: X-ray diffractometry, X-ray fluorescence analysis, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, galvanomagnetic measurements with 6-probe method (including hydrostatic compression), measurement of current-voltage characteristics of heterojunctions at direct and reverse voltages, Fourier spectroscopy of photoconductivity, Raman spectroscopy, measurements of the electro- and photoluminescence spectra, laser spectroscopy, static, dinamic and vibration magnetometry, generation and detection of coherent acoustic phonons in the terahertz and subterahertz frequency ranges, nuclear quadrupole resonance, and theoretical modeling. The results of the work are synthesis of single crystals of solid solutions based on AIVBVI doped with transition and rare earth elements, and the development of technology for growing and intercalating layered crystals and heterostructures based on AIIIBVI. Comprehensive studies of structural, electrical, magnetic, and optical properties of prototype samples of the mentioned compounds and based on them heterostructures have been carried out. Optimization of technological parameters and construction of physical models describing the energy structure of the new materials based on AIVBVI and AIIIBVI, suitable for creating sensors and emitters of the terahertz and infrared spectral ranges were done. The results obtained in collaboration with leading domestic and foreign research centers, point to the high perspectivity of this research direction. Product Description popup.authors popup.nrat_date 2020-04-02 Close