Search academic texts

Information × Registration Number 0219U101544, 0119U102104 , R & D reports Title The influence of solvent metals on the optical and structural properties of GaN monocrystals growth by crystallization from a solution in transition metals (Fe, Co, Cr) under high temperature and high-pressure conditions popup.stage_title Head Strelchuk Viktor V., Доктор фізико-математичних наук Registration Date 11-09-2019 Organization V. Lashkaryov Institute of semiconductor physics popup.description2 Principle possibility to synthesize GaN crystals from Fe-Ga-N solution under high temperature conditions in a high-pressure gas system in a feed-seed growth configuration has been demonstrated. The obtained GaN crystals had the form of hexagonal tiles with a size of ~ 100 ÷ 500 μm and a thickness of ~ 10 ÷ 20 μm and high crystalline quality of the wurtzite-type GaN structure. Mass spectrometry analysis showed that the GaN crystals under investigation, in addition to the expected Fe impurity, contain unintentional impurities such as B, Mg, Al, Si, K, Ca, Ti, Cr, Mn, and Cu. The concentrations of Fe impurity and unintentional impurities significantly differ for different GaN crystals synthesized in one technological cycle and in different parts of each crystal, which indicates their spatially inhomogeneous incorporation during GaN crystallization. Variation in the Raman spectra, near band edge and defect photoluminescence, and also the intra-center photoluminescence of the Fe3+ indicated spatial heterogeneity of the structural quality and impurity-defect state of the synthesized GaN crystals. Product Description popup.authors Boiko Vitalii A. Nikolaenko Andrii S. popup.nrat_date 2020-04-02 Close