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Information × Registration Number 0220U000214, 0119U000659 , R & D reports Title "Investigation of the influence of acoustic fields on the electophysical characteristics of nanostructures based on III-nitrides" popup.stage_title Head Olikh Yaroslav Mykhailovych, Registration Date 23-01-2020 Organization Institute of Semiconductor Physics popup.description2 The automation of the device for measuring electrophysical characteristics in nanostructures under of ultrasonic (US) loading is carried out. The technology of sample production for acoustoelectric measurements has been developed. The temperature, amplitude and time characteristics of the electrophysical parameters of Al0,2Ga0,8N / GaN structures under US loading were studied; the possibility of controlling the electrophysical characteristics of quantum structures by means of acoustic vibrations is shown. The transverse acoustoelectric effect in structures on surface acoustic waves under the conditions of influence of the gas environment (water vapor, ethyl alcohol and ionized air) is investigated. The fundamental possibility of using these structures as gas sensors is shown. The diffraction reflection curves for nitride nanostructures were studied underUS loading by X-ray topography methods. It is established that there is a change in the lattice parameter of the structure, with two factors determining: a) thermal, which as a result of heating the sample, leads to an increase in the lattice parameter; and b) dynamic - as a result of additional piezoelectric polarization of the structure, a certain lattice contraction occurs. It is the acoustodynamic effect that explains the results of acoustically induced changes in the electrophysical parameters of the structure. Product Description popup.authors Гудименко Олександр Йосипович Кудрик Ярослав Ярославович Оліх Ярослав Михайлович Тетяненко Микола Петрович Тимочко Микола Дмитрович Шинкаренко Володимир Вікторович popup.nrat_date 2020-04-02 Close