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Information × Registration Number 0220U000473, 0118U005338 , R & D reports Title "Development of "smart" microelectronic sensor for controlling the content of explosive and harmful gases in the air of domestic premises" popup.stage_title Head Lytovchenko Volodymyr, Registration Date 14-02-2020 Organization Institute of Semiconductor Physics popup.description2 R&D Report: 35 p., 22 figures, 2 tabl., 24 references. 1) The structure based on porous Si (j = 30 mA / cm2) with Ni film was found to exhibit the largest response signal depending on the concentration of butane in the air and the linearity of the concentration curve. 2) The effect of adsorbed methane molecules in the concentration range of 25-500 ppm in air at room temperature on the VAC structures with layers of porous Si formed at current densities of j = 30 mA / cm2 and with microparticles (Cu and Cu / Pd) was investigated. 3) The structure based on porous Si (j = 30 mA / cm2) with the Pd / Cu composite film shows the highest response signal depending on the concentration of methane in the air and better linearity of the concentration curve. Product Description popup.authors І.Є. Сапожинський І.І. Дрожча А.І. Курчак Горбанюк Т.І. Л.М. Шугаєва С.М. Мусаєв popup.nrat_date 2020-04-02 Close
R & D report
Head: Lytovchenko Volodymyr. "Development of "smart" microelectronic sensor for controlling the content of explosive and harmful gases in the air of domestic premises". (popup.stage: ). Institute of Semiconductor Physics. № 0220U000473
1 documents found

Updated: 2026-03-24