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Information × Registration Number 0220U001094, 0119U000295 , R & D reports Title Development and research of radiomeasuring frequency parametric microelectronic devices of physical quantities for military and civilian objects popup.stage_title Head Osadchuk Oleksander Volodimirovych, Registration Date 27-01-2020 Organization Vinnitsa National Technical University popup.description2 The aim of the work is to measure and control environmental characteristics for preventing explosions and preserving people's lives by creating radiomeasuring frequency parametric microelectronic devices simultaneously controlling and measuring the composition and concentration of gases, humidity, temperature, pressure and magnetic field induction with transmission of measurement results. The object of research and development is the process of converting signals proportional to gas concentration, pressure, humidity, induction of the magnetic field and temperature into a frequency signal in radiomeasuring frequency parametric microelectronic devices, which allows to solve the problem of constructing measuring instruments and environmental control with improved metrological characteristics. The subject of research and development is the method, radiomeasuring frequency parametric microelectronic devices of simultaneous control and measurement of composition and concentration of gases, pressure, humidity, induction of magnetic field and temperature based on the reactive properties of semiconductor structures with negative differential resistance for measurement and control of environmental characteristics military and civilian objects. The known methods and theoretical approaches that underlie the construction of radiomeasuring parametric converters of physical quantities into frequency signal are analyzed in the paper. The regularities of the influence of external factors (gas concentration, pressure, magnetic field induction and temperature) on changes in electrophysical properties and parameters of semiconductor structures with negative differential resistance and radiomeasuring frequency parametric microelectronic devices of physical quantities based on them have been established. Elements of the theory of gasreactive, thermoreactive, tensoreactive and magnetoreactive effects in bipolar and field semiconductor structures have been developed. Mathematical models of deterministic chaos generators with inertial nonlinearity based on transistor structures with negative differential resistance for the construction of frequency parametric microelectronic devices of physical quantities have been developed. Product Description popup.authors Воловик Андрій Юрійович Звягін Олександр Сергійович Коваль Констянтин Олегович Крилик Людмила Вікторівна Мартинюк Володимир Валерійович Осадчук Володимир Степанович Осадчук Олександр Володимирович Осадчук Ярослав Олександрович Савицький Антон Юрійович Семенов Андрій Олександрович Червак Оксана Петрівна popup.nrat_date 2020-04-02 Close