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Information × Registration Number 0220U100908, 0117U000630 , R & D reports Title The develop of a set the managed properties of many-valley semiconductors and polymer composite materials for the functioning in the extreme conditions of exploitation popup.stage_title Head Savchuk Petro P., Доктор технічних наук Registration Date 29-01-2020 Organization Lutsk National Technical University popup.description2 As a result of the conducted researches the energy spectrum and kinetics of annealing of radiation defects in electron-irradiated n-Ge crystals were obtained, the basic parameters were determined and the nature of radiation defects formed in electron irradiation in germanium and silicon were determined, the effect of the generated radiation defects was investigated, and photosensitivity for single crystals and the influence of internal mechanical stresses on the band structure and electrical properties of non-alloyed and doped alloys noplivok germanium. Mechanisms of structure formation of polymer composites without fillers and with the content of finely dispersed fillers under conditions of influence of external physical fields are established. The obtained results allowed us to determine the optimum conditions for irradiation and thermal annealing in order to obtain n-Ge and n-Si single crystals with predetermined electrical, electro-magnetic, optical and tensoelectric properties. Establishing possible options for managing the structuring processes of modified epoxy composites and for the first time for these materials a complex analysis of the features of creation and controlled functioning of polymer-matrix systems with different degree of dispersed filling, development on their basis of protective coatings of electronic equipment elements from the aggressive influence of external physical fields. An embedded detector for a Hall sensor based on irradiated germanium single crystals can be used for the indication and contactless measurement of electric current. A sensitive element of a three-band IR photodetector based on irradiated silicon single crystals can simultaneously capture wavelengths λ = 1.1 μm, λ = 11.6 μm and λ = 12 μm infrared radiation. The cost of such a detector and sensing element is less than analogues made on the basis of binary semiconductors and nanotechnologies, and the design is much simpler. Product Description popup.authors Zimych Andriy I. Kashitskii Vitalii P. Luniov Sergiy V. Maslyuk Volodymyr T. Matrunchyk Dmytro M. Melnychuk Mykola D. Udovytska Yulia A. Tsyz Andriy I. popup.nrat_date 2020-04-02 Close