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Information × Registration Number 0220U100958, 0117U004440 , R & D reports Title Thermo-radiation modification of a microstructure of silicon with isovalent impurities. popup.stage_title Head Neimash Volodymyr B., Доктор фізико-математичних наук Registration Date 30-01-2020 Organization Institute of physics of NAS of Ukraine popup.description2 Modification of microstructure, optical and electrophysical parameters of silicon containing isovalent impurities in amorphous, nanocrystalline and single crystalline states under the influence of different types of laser, gamma and electron irradiation and heat treatment has been investigated. For the first time, the existence of a non-thermal component of the influence of laser radiation on the processes induced by tin crystallization of amorphous silicon, as well as on Raman light scattering by silicon nanocrystals, is shown. The mechanism and parameters of the influence of the tertiary radiation defect of the crystalline structure of "divacancy-oxygen" in silicon on the recombination of nonequilibrium charge carriers in n-Si were first determined. The revealed patterns are important for the development of fundamental ideas about the crystallization mechanisms of amorphous semiconductors, the optical properties of nanoscale crystals, and the recombination properties of radiation-modified silicon single crystals. The results obtained are promising for application in the development of technologies for the production of film nanosilicon for solar cells of the third generation and for the improvement of existing radiation technologies for the control of parameters of electronic devices based on silicon. Product Description popup.authors Boyarchuck Anatoliy P. Kolosuk Andriy G. Krasko Mykola M. Lytvynchuck Pavlo M. Melnyk Viktor V. Neimash Volodymyr B. Povarchuk Vasyl Yu. Rogutskiy Ivan S. Yarotskiy Vasyl I. popup.nrat_date 2020-04-02 Close