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Information × Registration Number 0220U101047, 0117U002505 , R & D reports Title Development of tools and technologies for design and manufacture of high-performance nonvolatile ferroelectric memory devices for critical computer systems popup.stage_title Head Stirenko Sergij G., Доктор технічних наук Registration Date 31-01-2020 Organization Publishing and Printing Institute of Igor Sikorsky Kyiv Polytechnic Institute popup.description2  The use of slit high-frequency (HF) indirect cathode sources with indirect cooling of the target for the layer-by-layer deposition of the components on the substrate with their movement over the target surface is substantiated. Designs of sources for the deposition of ferroelectric film from zirconium-hafnium oxides and lead zirconate-titanate, focused on the use of targets with dimensions 68x30x5mm from powders of hafnium, zirconium, titanium, lead oxides, have been finalized. An alternative technology for depositing a ferroelectric film with a high level of stoichiometry of components is developed, based on the use of the created RF cathodic sputtering of single and multi-component targets for deposition of a film on silicon substrates with a diameter of 40 mm. The technology of the elements, the drives, is based on the application of high conductive barrier layers of oxides of chromium, nickel and cobalt between the film surfaces and the electrodes. A quality film of lead zirconate-titanate oxide Pb (Zr, Ti) O3 at 30 nm was obtained. Too important in technology is the use of acoustic stimulation. A method for measuring the characteristics of the pulse switching polarization of a superfine ferroelectric film has been developed, and the electrical polarization of elements on a thick (100 μm) and thin (30-100 nm) film has been investigated. Mathematical models of polarization, which determine the residual polarization in the capacitor from the action time and amplitude of the switching pulse signals, have been developed and refined, and based on them behavioral models have been developed that determine the polarization change with time at an arbitrary signal on the capacitor. The models of elements and drives of the computer-aided design system of devices in the PSPICE environment have been developed. Schematic, technological and topological design of experimental samples of drives with destructive and non-destructive readings were performed, sets of photo templa Product Description popup.authors popup.nrat_date 2020-04-02 Close
R & D report
Head: Stirenko Sergij G.. Development of tools and technologies for design and manufacture of high-performance nonvolatile ferroelectric memory devices for critical computer systems. (popup.stage: ). Publishing and Printing Institute of Igor Sikorsky Kyiv Polytechnic Institute. № 0220U101047
1 documents found

Updated: 2026-03-21