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Information × Registration Number 0221U100925, 0120U104055 , R & D reports Title Development of a complementary pair "laser emitter/photodetector" for guidance systems at a wavelength of 1.06 μm, Stage 2020. Section 2 popup.stage_title Head Radkevych Oleksandr I., Кандидат технічних наук Registration Date 11-01-2021 Organization State Scientific Institution “Institute for Single Crystals” of National Academy of Sciences of Ukraine popup.description2  The object of research is integral solid-state p-i-n photodiodes on high-resistance silicon. The purpose of the work is to develop the design, technology of creation and manufacture of silicon p-i-n photodiode (photodetector), sensitive to laser infrared radiation, folded on a flexible carrier, which significantly improves the mass and dimensions of electronic equipment for weapons systems. Research methods - in the process of project implementation the main provisions of solid-state microelectronics, mathematical modeling of the process of creating a p-i-n photodiode topology were used. As a result of R&D, preliminary design documentation for the production of working templates was developed. Experimental samples of p-i-n photodiode crystals were made and tested and their parameters were investigated. The design and technological route of assembly of silicon p – i – n photodiodes in the caseless design are developed. Made photo templates for flexible media. The technology of assembly of silicon p – i – n photodiodes in bodyless design has been developed. Experimental samples of p-i-n photodiodes on high-impedance silicon were made and tested and their parameters were investigated. Product Description popup.authors Glotov Volodymyr I Grunianska Valentyna P Zhora Volodymyr D Коvaliov Leonid G Popov Volodymyr M Ryzhkov Volodymyr M Samotovka Lev I Sapon Serhii V Trofimova Svitlana S popup.nrat_date 2021-01-11 Close