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Information × Registration Number 0221U103850, 0120U102368 , R & D reports Title Tin-induced volume nanocrystallization and surface nanostructuring of the amorphous silicon thin films. popup.stage_title Head Neimash Volodymyr B., Доктор фізико-математичних наук Registration Date 25-02-2021 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 According to the calendar plan of the I stage of the scientific project the following works are executed: - The original technology of manufacturing of multilayer film structures "amorphous Si - metal Sn" on substrates of different types is developed. An innovative aspect of the technology is the deposition of silicon films from the gas phase on the surface of liquid metal. This allows to control the nanostructuring of the surface relief of amorphous and nanocrystalline silicon films in the scale of 200 - 1000 nm, which is relevant for reducing energy losses of solar cells due to light reflection. - Research of microstructural and optical parameters of experimental samples of film heterostructures; improvements in their manufacturing technology have been made to improve the homogeneity of the area distribution and the repeatability of nanostructuring scales. Product Description popup.authors Lytvynchuk Pavlo M Neimash Volodymyr B Strelchuk Viktor V Shepelyavyi Petro Ye popup.nrat_date 2021-02-25 Close
R & D report
Head: Neimash Volodymyr B.. Tin-induced volume nanocrystallization and surface nanostructuring of the amorphous silicon thin films.. (popup.stage: ). Institute of Physics of National Academy of Sciences of Ukraine. № 0221U103850
1 documents found

Updated: 2026-03-27