1 documents found
Information × Registration Number 0221U103852, 0120U102325 , R & D reports Title Optic and photoelectric phenomena in the size-quantization nano and heterostructures based on the III-V semiconductor compounds with spatial separation of the non-equilibrium charge carriers. popup.stage_title Head Poroshyn Volodymyr M., Доктор фізико-математичних наук Registration Date 25-02-2021 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 The results of theoretical studies of the energy spectrum of carriers in the valence band are presented, accounting for presence of many energy valley and internal stresses. There have been caried out calculations of the conduction and valence bands potential profiles for the InGaAs/GaAs and GaAs/AlGaAs heterostructures doped into barriers and quantum wells by the shallow donor or acceptor impurities, the energy spectrum, and dispersion law of electrons and holes, envelop wave function of charge carriers in the quantum subbands, matrix elements and the energy of the spatially direct and indirect optical interband transitions. The algorithms and computer program for numerical calculations of them have been developed. The experimental studies of the photoluminescence spectra of the InGaAs/GaAs and GaAs/AlGaAs heterostructures doped in barriers and wells by the shallow donor impurities have been performed in the steady-state regime and non-steady-state regime with picosecond time resolution at different photoexcitation energies and temperatures of 77 and 300 K. The parameters of the spectra bands are determined and compared with the experiment. The relative probabilities of the spatially direct and indirect optical transitions are calculated, and it is shown that the bands observed in the experiment are practically due to the spatially direct transitions only. The obtained results are useful for further studies of photoelectric phenomena in the quantum-sized nano- and heterostructures based on A3B5 semiconductors and in development of the optoelectronic devices. Product Description popup.authors Bilyovsкiy Pavlo A Vainberg Viktor V Kochelap Vyacheslav O Pylypchuk Oleksandr S Poroshin Volodymyr M Chornomorec Nadiya F popup.nrat_date 2021-02-25 Close
R & D report
Head: Poroshyn Volodymyr M.. Optic and photoelectric phenomena in the size-quantization nano and heterostructures based on the III-V semiconductor compounds with spatial separation of the non-equilibrium charge carriers.. (popup.stage: ). Institute of Physics of National Academy of Sciences of Ukraine. № 0221U103852
1 documents found

Updated: 2026-03-28