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Information × Registration Number 0221U106197, 0121U111163 , R & D reports Title Feasibility study for the creation of an experimental technological line for the manufacturing of matrix IR receivers of different formats and the technological route of manufacturing a matrix IR receiver by format 128x128 elements with a step of 50 μm on the spectral sensitivity range of 3-5 μm based on photosensitive MCT layers popup.stage_title Head Syzov Fedir F., д.ф.-м.н. Registration Date 04-11-2021 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  The report on the work describes the main processes of development and manufacture of matrix IR photodetectors of various formats based on photosensitive layers of MCT for creating thermal imaging devices, in particular, a format of 128x128 elements with a step of 50 μm for a spectral sensitivity range of 3 - 5 μm, taking into account the available equipment, areas and staff at the Institute of Semiconductor Physics. V.E. Lashkareva NAS of Ukraine. An assessment of the creation of such a production facility at the State Enterprise Scientific and Technical Center “Beryliy” has been carried out. The technological route of production is described with the designation of the equipment necessary for the manufacture and control of the parameters of matrix photodetectors. A complete list of workplaces and the course of movement of products from one workplace to another is given. A list of necessary machines and equipment with planning their placement, determining the electrical capacity of the equipment is given. The assessment of the calendar implementation of the organization of small-scale production of matrix photodetectors on the basis of the "Beriliy" company has been carried out. Product Description popup.authors Reva Volodymyr P popup.nrat_date 2021-11-04 Close
R & D report
Head: Syzov Fedir F.. Feasibility study for the creation of an experimental technological line for the manufacturing of matrix IR receivers of different formats and the technological route of manufacturing a matrix IR receiver by format 128x128 elements with a step of 50 μm on the spectral sensitivity range of 3-5 μm based on photosensitive MCT layers. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0221U106197
1 documents found

Updated: 2026-03-27