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Information × Registration Number 0221U106436, 0120U103138 , R & D reports Title Development and creation of a new type of light-emitting diodes based on hybrid nanostructures with increased radiation efficiency popup.stage_title Head Korbutiak Dmytro V., Доктор фізико-математичних наук Registration Date 07-12-2021 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  The work is devoted to the manufacture of light-emitting devices of visible range, designed for the selection of cereals by selecting the optimal distribution of the spectrum, which records the maximum indicators of germination and growth of plants. The object of research is phosphors based on NC CdTe, doped with impurities of rare earth elements (La, Er) and hybrid semiconductor-metal nanostructures (NC CdTe + Au nanoparticles). Objective - To develop and test light emitting devices of the visible range of the spectrum for use in grain breeding plants. Research results - A method of manufacturing stable phosphors based on NC CdTe doped with impurities of rare earth elements (La, Er) and hybrid semiconductor-metal nanostructures (NC CdTe + Au nanoparticles) was developed. Experimental samples of visible light emitting devices (wavelength = 550-660 nm) with remote phosphors based on CdTe NC, doped with impurities of rare earth elements and hybrid semiconductor-metal nanostructures suitable for irradiation of cereal seeds were prepared. Tests at the Institute of Forage and Agriculture of Podillya NAAS of Ukraine have shown that the most effective for improving the germination of grain crops of spring wheat variety "Pecheryanka", spring barley varieties "Svarog", "Oberig", "Barvystyj" and selection of the most productive varieties are light devices with the maximum intensity of radiation 650 nm, a bandwidth of about 10 nm. Keywords: LED, nanocrystal, cadmium telluride, colloidal solution, phosphor, rare earth elements. Product Description popup.authors Ermakov Valeriy M. Ivaskevych Lyudmyla M. Budzulyak Serhii I Vaakhnyak Nadiya D. Venger Evhen F. Demchyna Lubomyr A. Kalytchuk Serhii M. Kapush Olga A. Kosinov Oleksandr G. Kulchytsky Bohdan Nestorovych Kupchak Ihor M. Lotsko Olexandr P. popup.nrat_date 2021-12-07 Close
R & D report
Head: Korbutiak Dmytro V.. Development and creation of a new type of light-emitting diodes based on hybrid nanostructures with increased radiation efficiency. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0221U106436
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Updated: 2026-03-25