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Information × Registration Number 0221U107210, 0120U102325 , R & D reports Title Optic and photoelectric phenomena in the size-quantization nano and heterostructures based on the III-V semiconductor compounds with spatial separation of the non-equilibrium charge carriers. popup.stage_title Head Poroshyn Volodymyr M., Доктор фізико-математичних наук Registration Date 29-12-2021 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 The investigation results of photoconductivity in the semiconductor heterostructures under the interband photoexcitation providing the spatial separation of nonequilibrium carriers of different sign are presented: for the structures with two asymmetrically doped structural wells or the structural well and impurity well formed by the impurity layer in the barrier. The energy spectra of charge carriers in the conduction and valence band and their dispersion laws, envelope wave functions of carriers in the size quantization subbands, matrix elements and energies of the spatially direct and indirect optical interband transitions are calculated. Experimental studies of photoconductivity were carried out under the steady-state and transient excitation conditions. The latter allowed to study the processes of energy relaxation of photoexcited nonequilibrium carriers, as well as the difference in the case of the intrawell excitation and excitation to the barrier. The data on the relaxation times for different relaxation processes are given. Product Description popup.authors Bilyovskiy Pavlo Antonovich Vajnberg Viktor Volodymyrovych Vynoslavskiy Mykhailo Mykolayovych Gudenko Yulia Mykolayivna Korotyeyev Vadym Vyacheslavovych Kochelap Vyacheslav Oleksandrovich Pylypchuk Olexander Serhiyovych Poroshin Volodymyr Mykolayovich Chornomorets Nadiуa Fedorivna popup.nrat_date 2022-03-09 Close