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Information × Registration Number 0222U000654, 0119U002247 , R & D reports Title Formation of graded-gap film structures based on CdSexTe1-x for solar cells and optimization of their properties popup.stage_title Head Registration Date 14-01-2022 Organization Lviv Polytechnic National University popup.description2 The optical losses in the basic structure of glass/ITO/CdSeTe/CdTe are analyzed and the optimal thicknesses of the active and buffer layers are determined. It was found that the change in the thickness of the graded-gap layer has little effect on the characteristics of the solar cell (SC), but depends on the composition profiles and the band gap of the graded-gap layer. The highest efficiency is provided by a parabolic profile. The technique of high-frequency magnetron sputtering has been worked out and the optimal technological regimes of obtaining photosensitive barrier structures based on CdSeTe graded-gap films have been determined. The electrical characteristics of the formed ohmic contacts to the CdS/CdTe and CdSeTe/CdTe heterojunctions have been studied. The physical bases of the technology of complex formation of the р+ – р transition by copper doping of the near - surface region of the CdTe film have been developed. Experimental samples of CdS/CdTe solar cells and SC with a homogeneous and CdSeTe graded-gap layer were prepared. The use of the graded-gap layer in the SC structure provides an increase in the efficiency of photoconversion (efficiency increases from 15.9 to 18.1 %) compared to samples without it.   Product Description popup.authors Bilenka Olha B Honchar Fedir M Danylov Andrii B Karkulovska Maryana S Kashuba Andrii I Kushnir Oleh S Lopatynskyi Ivan Ye Moroz Iryna Ye Petrus Roman Yu Romanyuk Mykola M Semkiv Ihor V Solovyov Mykola V Ukrainets Natalia A Fihurka Olha Ya popup.nrat_date 2022-03-09 Close