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Information × Registration Number 0222U001054, 0119U100804 , R & D reports Title Synthesis and investigations of physical properties of new narrow-gap and layered compounds for spin electronics and infrared optoelectronics popup.stage_title Head Kovaliuk Zakhar D., Registration Date 23-01-2022 Organization Chernivtsi Branch of Frantsevich Institute of Problems of Materials Science popup.description2 New A4B6 single crystals doped with 3d elements, as well as layered crystals A3B6, A4B7 were grown; heterostructures based on A3B6 are made. Comprehensive studies of their structural, electrical, magnetic and optical properties have been carried out. Physical models describing the energy structure of new materials based on A4B6 and A3B6, suitable for use in nanoelectronics and infrared electronics, have been built. Objects of research: single crystals PbTe, SnTe, GeTe; ternary and quaternary compounds: Pb1-yScyTe, Pb1-x-ySnxScyTe; Pb1-yNiyTe, Pb1-x-ySnxNiyTe; Pb1-x-ySnxFeyTe; Pb1-xSixTe; Ge1-xEuxTe; InSe single crystals; InSe layers and InSe/InSe homosexual transitions; heterostructures h-BN/InSe/graphene on a substrate SiO2/Si; nanocomposite Pb1-xMnxI2. Product Description popup.authors Ivanov Volodymyr Igorovych Kudrynskyi Zakhar Ruslanovych Savitskii Petro Ivanovych Tkachuk Ivan Heorhiyovych Tovarnytskyi Mircha Vasylʹovych popup.nrat_date 2022-03-09 Close