Search academic texts

Information × Registration Number 0222U002190, 0120U102368 , R & D reports Title Tin-induced volume nanocrystallization and surface nanostructuring of the amorphous silicon thin films. popup.stage_title Head Neimash Volodymyr B., Доктор фізико-математичних наук Registration Date 10-02-2022 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 The influence of the dark heat treatment regimes of Si \ Sn film structures on the tin-induced transformation of silicon from amorphous to nanocrystalline state was studied by the methods of Raman spectroscopy, electron and force microscopy. It has been experimentally determined that the most effective phase (tin-induced) transformation of silicon from amorphous to crystalline state occurs in the temperature range 750-800 0C. In 5-15 minutes of annealing at such temperatures, about half of the silicon atoms become nanocrystals with a size of 3-5 nanometers. The influence of heat treatments and stoichiometry of the constituent layers of structures on the ratio of the volumes of the amorphous and crystalline phases as a result of crystallization of amorphous silicon induced by tin was experimentally determined. Nanoscale structuring of the fractal type of the surface of amorphous silicon during deposition from the gas phase on the surface of liquid metal was discovered for the first time. Product Description popup.authors Lytvynchuk Pavlo Mykolayovych Neimash Volodymyr Borysovych Strelchuk Viktor Vasylyovych Shepelyavyi Petro Yevgenovych popup.nrat_date 2022-03-09 Close