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Information × Registration Number 0222U002223, 0122U000791 , R & D reports Title Development of processes for the formation of periodically ordered plasmonic nanostructures by interference photolithography based on chalcogenide semiconductors, production of experimental samples and study of their characteristics. Stage 2 "Study of morphological and optical characteristics of experimental samples of PPN with correlated relief" popup.stage_title Head Indutnyi Ivan Z., д.ф.-м.н. Registration Date 10-02-2022 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  An experimental study of the excitation of surface plasmon polaritons (SPPs) on gratings with a correlated relief based on layers of gold, silver, and aluminum has been carried out. It has been established that the dependence of the SPP excitation efficiency on the modulation depth has a maximum, the position of which depends on the metal with which the SPP is coated, the thickness and roughness of the metal films. At such optimal h/a, the absorption of electromagnetic radiation from an incident laser beam exceeded the absorption of a metal film with a flat surface by more than two orders of magnitude. The position of the SPP resonant excitation angle shifts to the region of smaller incidence angles with increasing h/a, and the dependence of the SPP absorption band half-width on the modulation depth is close to quadratic. It is shown that as a result of storage in an air atmosphere, the internal structure of the films improves, stresses decrease due to recrystallization, the formation of a surface layer due to chemical interaction with the atmosphere, and an increase in surface roughness, which manifests itself in changes in the SPP parameters (a shift in the angular position of the plasmon resonance, an increase in its half-width and a change in the depth of the minimum). . Product Description popup.authors Danko Viktor A. Lukanyuk Mariya V. Mynko Viktor Iv. Sopinskyy Mykola V. popup.nrat_date 2022-03-09 Close
R & D report
Head: Indutnyi Ivan Z.. Development of processes for the formation of periodically ordered plasmonic nanostructures by interference photolithography based on chalcogenide semiconductors, production of experimental samples and study of their characteristics. Stage 2 "Study of morphological and optical characteristics of experimental samples of PPN with correlated relief". (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0222U002223
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Updated: 2026-03-27