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Information × Registration Number 0222U003107, 0121U109519 , R & D reports Title Physical and technological principles of obtaining Cu2 (Zn; Al, Ag) (Sn; In; Ga) S4 films and silicon carbide on porous silicon substrates popup.stage_title Head Kidalov Valerii V., Доктор фізико-математичних наук Registration Date 18-02-2022 Organization Dmytro Motornyi Tavria State Agrotechnological University popup.description2  Object of research - physicochemical processes occurring as a result of the formation of SiC film on substrates of porous silicon and compounds A2B6, A3B5, Ga2O3 on the template SiC/porous-Si/Si, electrophysical and structural properties of Cu2(Zn;Al,Ag) (Sn;In;Ga)S4 and electrophysical properties of Cu2 (Zn; Al, Ag) heterostructures (Sn; In; Ga)S4/porous-Si/Si and Cu2(Zn;Al,Ag)(Sn;In;Ga)S4/Mo/porous-Si/Si. The aim of the work is to create scientific bases for controlled synthesis of epitaxial films and nanostructures of broadband semiconductors (A2B6, A3B5, Ga2O3) on SiC nanofilms obtained on porous silicon, as well as synthesis of quaternary Cu2 (Zn; Al, Ag) (Sn; In; Ga) S4 compounds. , study of physical processes occurring in these materials with different methods of their synthesis, analysis of impurities, synthesis modes and subsequent technological treatments on the structure, phase transitions and related structural distortions in the material, as well as the creation of new generation instrument structures. Research methods - scanning electron microscopy, X-ray diffractometry, spectral analysis, electrography. The results of research - synthesized films of zinc oxide ZnO by HF magnetron sputtering zinc target on a silicon substrate using buffer layers SiC and porous-Si: thickness ~ 1 μm, oriented along the main direction of the texture [0001], polycrystalline nature the length of the coherence region is 11.8 nm; The possibility of obtaining fine Cu2ZnSnS4 by self-propagating high-temperature synthesis was studied, the combination of light scattering and IR-Fourier spectroscopy of the synthesized fine material was studied, the analysis of Raman and IR-Fourier spectra showed that the synthesized material the inclusion of a number of secondary phases in the form of sulfides and stanites. Product Description popup.authors popup.nrat_date 2022-03-09 Close
R & D report
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Head: Kidalov Valerii V.. Physical and technological principles of obtaining Cu2 (Zn; Al, Ag) (Sn; In; Ga) S4 films and silicon carbide on porous silicon substrates. (popup.stage: ). Dmytro Motornyi Tavria State Agrotechnological University. № 0222U003107
1 documents found

Updated: 2026-03-26