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Information × Registration Number 0222U003477, 0119U100315 , R & D reports Title Dynamic phenomena and phase transitions in micro and nanostructured materials for modern magnetoelectronics devices. popup.stage_title Head Sheka Denys D., Доктор фізико-математичних наук Registration Date 03-04-2022 Organization Taras Shevchenko National University of Kyiv popup.description2 The object of research - solid metal alloys, which are characterized by magnetostructural phase transitions, magnetic structures of complex geometry, layered magnetic structures of reduced dimension with dielectric and metallic layers, ordered and disordered arrays of magnetic nanoelements. The aim of the work is to study dynamic electromagnetic phenomena and phase transitions in micro- and nanostructured magnetic materials, magnetic layered structures and structures with complex geometry to improve existing and develop new devices spintronics, magnonics, spin-orbitronics, skirmionics and strays. Research methods - theoretical analysis, numerical simulation, experimental research in the microwave and optical range, radio, photoelectron and electron spectroscopy, atomic force and electron microscopy. The effects related to topological magnetic states and curvature effects in nanomagnets have been studied. The appearance of a homogeneous Dyaloshinsky-Mori interaction and weak ferromagnetism in antiferromagnetic spin chains is predicted. A method for manipulating the domain wall in a Cr2O3 single crystal is proposed. A method for determining the permanent Dzialoshinsky-Mori interaction and the constant attenuation of the domain wall in nanospends is proposed. The existence of circular ribbons is envisaged domains in Py / Pd / Co. The influence of annealing on the characteristics of the grain boundary structure of phosphorus-doped polysilicon films has been studied. It is shown that the share of special joints of grain boundaries in general, both triple and multiple, increases with increasing annealing temperature. Estimates of relative grain boundary energy of polysilicon films are carried out. The conditions of application of the topological model for the analysis of the grain boundary structure are established. Product Description popup.authors Borysenko Elisaveta A Vasylev Anatoliy G. Danko Volodymyr P. Derevnina Zinaida M. Zayets Oleksandr Yu. Zavyslyak Іgor V. Karyachka Vladyslav S. Kovalenko Andriy V. Kolesnyk Oleg G. Kolomiets Roman О. Kondratovych Yuriy M. Kot Oleksandr O. Kuraschov Vitaliy N. Len Yurii A. Melkov Gennadiy A. Malyschev Volodymyr Yu. Malyshev Oleksiy V. Morozov Yevhen V. Muzyka Bogdan O. Popov Maksym O. Prokopenko Oleksandr V. Pustovit Yuriy V. Rodionova Tetyana V. Romanyuk Olena V. Sizhuk Andrii S. Slobodianiuk Denys V. Sochatsky Volodymyr P. Tomilo Artem V. Chernoluzkyj Dmytro L. Chersky Yuriy S. Yakymov Costyantyn I. popup.nrat_date 2022-04-03 Close