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Information × Registration Number 0222U005344, 0121U113502 , R & D reports Title Development of technology for the manufacture of heterostructures based on nanoporous silicon for solar cells popup.stage_title Head Kidalov Valerii V., Доктор фізико-математичних наук Registration Date 27-12-2022 Organization Dmytro Motornyi Tavria State Agrotechnological University popup.description2  The object of research is SiС/porous-Si/Si (100) heterostructures. The purpose of the stage is to develop the heterostructure manufacturing technology SiС/porous-Si/Si (100) for solar photovoltaic cells. Research methods are scanning electron microscopy, X-ray diffractometry, photoluminescence, electronography. Using the developed technology, SiC films on the mesoporous surface of Si (100) with a pore diameter of ~20 nm and a porous layer depth of ~270 nm were obtained by the method of chemical substitution of atoms at a processing temperature of 1290°C. According to the results of morphological studies, it was established that the thickness of the film is ~250 nm, and the rms roughness of the SiC film is 59 nm. The point reflections of the electronograms clearly indicate the presence of an epitaxial layer of the 3C-SiC polytype on the Si surface. The electron pattern also shows that the SiC film is smooth and does not contain duplicates on the surface. The application of the technique of X-ray phase analysis showed the presence of both cubic and hexagonal phases in the SiC film. The size of the regions of coherent scattering, determined by the Debye-Scherrer formula, is 28.7 nanometers. The obtained photoluminescence spectra of SiC films extended from the ultraviolet region of the spectrum, covering almost the entire visible region of the spectrum. Luminescence in the region of hexagonal phases of polytypes 2H and 4H formed in the transition region was predominant at a wavelength of ~372 nm. Product Description popup.authors Dyomina Natalya Anatoliivna Dyadenchuk Alena F. Khrypko Serhii Leonidovych popup.nrat_date 2022-12-27 Close