Search academic texts

Information × Registration Number 0223U000505, (0120U101250) , R & D reports Title Heterojunctions based on thin films of graphite and graphene for use in electronics, solar energy and high energy particle detectors popup.stage_title Гетеропереходи на основі тонких плівок графіту та графену для застосування в електроніці, сонячній енергетиці та детекторах частинок високої енергії Head Koziarskyi Ivan Р., Кандидат фізико-математичних наук Registration Date 09-01-2023 Organization Yuriy Fedkovych Chernivtsi National University popup.description1 The aim of the project is to develop technological modes of obtaining thin films of graphite and graphene by various methods, as well as to develop technological modes of manufacturing new and little-studied heterojunctions by applying thin films of graphite and graphene to semiconductor crystals with reproducible parameters for use in electronics, solar energy and high energy particle detectors; Investigation of their structural, electrical, photoelectric and detecting properties at different temperatures, frequencies of the measuring signal under the action of γ-rays of different energy using new methods to determine the dominant mechanisms of current transfer and barrier parameters popup.description2 Photosensitive Schottky diodes graphite/n-Si, graphite/n-Cd1-xZnxTe were created using the “pencil-on-semiconductor” technology and the method of electron beam evaporation of graphite, graphite/p-InP structures were created by transferring a drawn graphite film onto an InP substrate. Graphene/p-CdTe and graphene/n-Si surface-barrier structures were fabricated by pulverization of the mechanical exfoliated graphite in an aqueous solution of polyvinylpyrrolidone (PVP) with the formation of multilayer graphene. Product Description popup.authors Koziarskyi Ivan Р. Kuryshchuk Serhii I. Maistruk Eduard V. popup.nrat_date 2023-01-09 Close