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Information × Registration Number 0223U001220, 0122U002564 , R & D reports Title Modification and investigation of optoelectronic properties of ZnO thin films and nanostructures for photovoltaic applications popup.stage_title Head Vasin Andrii V., Доктор фізико-математичних наук Registration Date 25-01-2023 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  The growth morphology of ZnO films was studied. It was established that the morphology of the film growth contains two main layers: a thin fine-grained layer with a grain size of about tens of nanometers at the interface with the substrate, and the main coarse-grained layer. The resulting films were used as a seed layer for growing nanowires by the hydrothermal method at the Institute of Electronics and Photonics of the Czech Academy of Sciences. It is shown that the most effective is the use of thin films with the minimum grain size as the seed layer. It has been demonstrated that in this case there is a significant decrease in the optical reflectance of the combined film/nanowire layer. Product Description popup.authors Homeniuk Yuryi V. Kysil Dmytro Nazarov Oleksii M. Rusavsky Andriy V. Slobodian Olexander popup.nrat_date 2023-01-25 Close