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Information × Registration Number 0223U004923, 0120U104976 , R & D reports Title Development of new compositions of carbon solvents for the cultivation of diamond single crystals in the field of thermodynamic stability with a controlled content of nitrogen and boron impurities in order to create conceptual designs of electronic devices popup.stage_title Head Ivahnenko Serhii O., Доктор технічних наук Registration Date 09-12-2023 Organization V. Bakul Institute of superhard material of the National Academy of Sciences of Ukraine popup.description2  A new method of digital micro-photogrammetry for scanning the habit form of crystals, indexing faces, as well as analysis, forecasting and visualization of the sectoral structure of HPHT diamonds has been developed. Express methods of scanning nanoprobe microscopy for mapping surface morphology, determination of electrophysical parameters, distribution of electrically active impurities and defects for type IIb semiconductor single crystals and multi-sector diamond plates with nanometer resolution have been developed and tested. The technology for obtaining Ti/Pt/Au ohmic electrical contacts (38/75/50 nm) for type IIb diamond single crystal plates was developed and refined. The architecture was optimized and lateral Schottky diodes Au/Pt/Ni/diamond based on substrates cut from boron-doped HPHT-diamond type IIb were obtained. Lateral Schottky diodes with low reverse currents (10-11 A) and significant forward currents (3 mA) at room temperature were created on the basis of HPHT-diamond single crystals doped with boron with an acceptor impurity concentration of the order of 1018 cm-3 . Product Description popup.authors Burchenia Andrii V. Gordeyev Sergiy О. Danylenko Ihor M. Klochok Viacheslav Yu. Kovalenko Tetiana V. Malyuta Serhii V. Nikolenko Andriy S. Strel'chuk Viktor V. Stubrov Yurii Yu. popup.nrat_date 2023-12-09 Close