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Information × Registration Number 0224U000938, 0122U001303 , R & D reports Title The formation mechanism of new metal-semiconductor nanomaterials as a result of the interfacial interaction of components popup.stage_title Head Bohatyrenko Serhii I., Кандидат фізико-математичних наук Registration Date 15-01-2024 Organization V.N. Karazin Kharkiv National University popup.description2  The main attention is paid to the study of the kinetics of the formation of the metastable phase state, its temperature stability and the characteristics of the metal-semiconductor interface as a function of the annealing temperature and size using advanced in situ methods, and its thermoelectric characteristics. The subject of the study: The mechanism of formation of metastable solid solutions and their temperature stability in nanoscale binary metal-semiconductor systems. Research object: Multilayer a-Ge–Bi–a-Ge films with different ratio of components and different total thickness. Original in situ research methods developed by the authors were used to solve the tasks. Thus, the Quartz resonator technique, which has proven itself as a method of recording the formation of a liquid phase in condensed films, was used to establish the maximum limit of solid solubility of Bi in Ge. To study the kinetics and limits of temperature stability of the formed metastable phase, the methods of in situ electron microscopy TEM, SAED, HAADF STEM, EDX, EELS. The thermoelectric properties were studied using the cutting-edge Thin-Film Analyzer method from LINSEIS. As a result of the project: - the data obtained for the first time regarding the conditions for the formation of a metastable phase in the Bi-Ge system as a result of the significant dissolution of Bi in the semiconductor; - the maximum concentration of Bi that dissolves in germanium was determined for the first time and the mechanism of this solubility was determined; - experimental data on the temperature stability of the formed metastable solution depending on the size of the nanosystem were obtained for the first time; - a systematic study of the kinetics of the formation of a metastable solid solution in the nanoscale Bi-Ge film system was carried out for the first time. - a systematic study of the electro-physical parameters of the films of the formed metastable solution of 28 wt.% Bi – Ge was carried out. Product Description popup.authors Dukarov Serhii V. Kuznietsov Pylyp E. Petrushenko Serhii Ivanovich Sukhov Ruslan V popup.nrat_date 2024-01-15 Close