1 documents found
Information × Registration Number 0224U001155, 0121U109519 , R & D reports Title Physical and technological principles of obtaining Cu2 (Zn; Al, Ag) (Sn; In; Ga) S4 films and silicon carbide on porous silicon substrates popup.stage_title Head Kidalov Valerii V., Доктор фізико-математичних наук Registration Date 18-01-2024 Organization Dmytro Motornyi Tavria State Agrotechnological University popup.description2 The object of research is the physical and chemical processes that occur as a result of the formation of a SiC film on porous silicon substrates and A2B6, A3B5, Ga2O3 compounds on a SiC/porousSi/Si template. Electrophysical and structural properties of Cu2(Zn;Al,Ag)(Sn;In;Ga)S4 and electrophysical properties of Cu2(Zn;Al,Ag)(Sn;In;Ga)S4/porousSi/Si and Cu2(Zn;Al),Ag)(Sn;In;Ga)S4/Mo/porousSi/Si heterostructures. The subject of research is heterojunctions SiC/porousSi/Si, A2B6/SiC/porousSi/Si, A3B5/SiC/porousSi/Si, Ga2O3/SiC/porousSi/Si and Cu2(Zn;Al,Ag)(Sn;In;Ga)S4/porousSi/Si, Cu2(Zn;Al,Ag)(Sn;In;Ga)S4/Mo/porousSi/Si. In order to solve the main tasks of the project, the physical processes that take place in the materials during various methods of their synthesis were investigated, as well as the analysis of the influence of impurities, synthesis modes and subsequent technological treatments on the structure, phase transitions and related structural distortions in the material, and also considered creation of new generation instrument structures based on manufactured materials. The result of the topic: ZnO/SiC/porousSi/Si, Ga2O3/SiC/porousSi/Si, Cu2(Zn;Al,Ag)(Sn;In;Ga)S4/porous Si/Si heterostructures were obtained and their optical, structural and electrical properties for further application in power electronics. POROUS SILICON, SILICON CARBIDE FILM, HETEROSTRUCTURE, KYSTERITE, SOLID-PHASE EPITAXY METHOD, SELF-PROPAGATING HIGH-TEMPERATURE SYNTHESIS METHOD. Product Description popup.authors Dyomina Natalya A. Dyadenchuk Alena Zhuk Anton Gennadievich Kidalov Valerii V. Onyschenko Galyna popup.nrat_date 2024-01-18 Close
R & D report
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Head: Kidalov Valerii V.. Physical and technological principles of obtaining Cu2 (Zn; Al, Ag) (Sn; In; Ga) S4 films and silicon carbide on porous silicon substrates. (popup.stage: ). Dmytro Motornyi Tavria State Agrotechnological University. № 0224U001155
1 documents found

Updated: 2026-03-27