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Information × Registration Number 0224U032243, 0120U104210 , R & D reports Title Optical and electro-optical properties of semiconductors and semiconductor nanostructures. popup.stage_title Head Tulupenko Viktor M, Доктор фізико-математичних наук Registration Date 20-08-2024 Organization Donbass State Engineering Academy popup.description2  Research object: SiGe/Si/SiGe quantum well delta-doped to the center of the QW. The purpose of the work: to study the influence of background impurities on the binding energy of delta layer impurities and on the difference between the first space-quantized energy levels (the most important in opto-electronic devices). Research method: theoretical. Results and their novelty: for the first time, the influence of background impurities in the barriers of delta-doped quantum wells on the two effects discovered by us in such structures, namely, the change in the ionization energy of delta layer impurities and the location on the energy scale of the first levels of spatial quantization, was calculated and analyzed. The description of the self-consistent method includes the calculation of the binding energy of the donor impurity in the delta layer. It is shown that the binding energy of the delta-layer impurity, as well as the energy difference between the first levels of spatial quantization, significantly depend on the background doping characteristics. It was concluded that background doping cannot be neglected when studying such phenomena as intersubband optical transitions. Product Description popup.authors Vasylieva Iryna V. Kostenko Volodymyr M. Sushchenko Dmytro H.. Tulupenko Viktor M. Fomina Oksana S. popup.nrat_date 2024-08-20 Close