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Information × Registration Number 0225U000735, (0123U100458) , R & D reports Title Development of the element base technology of modern infrared photoelectronics popup.stage_title Розробка технології елементної бази сучасної інфрачервоної фото електроніки Head Valakh Mykhailo Ya., Доктор фізико-математичних наук Registration Date 17-01-2025 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 The goal of the project is to create a modern technological base for the production of the main elements of infrared photoelectronics of the third generation, including infrared matrix photoreceiving devices (IR FPP) and thermal photoreceptors (microbolometers). popup.description2 It is established that the microstructuring of the surfaces of IR photosensitive elements due to the formation of periodic metal lattices is promising for the creation of devices with electrical control of the spectral characteristics of absorption, reflection and transmission. The theory of such multigate plasmon photoreceiving structures, which are created on the basis of InSb by various technological methods, has been developed. The relationship between the structural, mechanical, and optical properties of thin layers of VO2 in the phase transition region, which underlies the functioning of microbolometers, has been established. The mechanisms and technological parameters of improving the photovoltaic and transport characteristics of Hg1-xCdxTe thin layers and photodetectors based on them are established. Product Description popup.authors Valakh Mykhailo Ya. Dzhahan Volodymyr M. Dubikovskyi Oleksandr V. Koroteiev Vadym V. Kochelap Viacheslav O. Lytvyn Petro M. Melnyk Viktor Р. Andrii S. Nikolenko Oberemok Oleksandr S. Romaniuk Borys M. Sapon Serhii V. Syzov Fedir F. Stadnyk Oleksandr A. Viktor V. Strelchuk Teterkin Volodymyr V. Tsybrii Zinoviia F. Yukhymchuk Volodymyr O. popup.nrat_date 2025-01-17 Close