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Information × Registration Number 0225U002647, (0122U001702) , R & D reports Title Physical processes in ultra-wide bandgap oxide materials for energy-saving technologies popup.stage_title Фізичні процеси в ультраширокозонних оксидних матеріалах для енергозберігаючих технологій Head Pavlyk Bohdan V., Доктор фізико-математичних наук Registration Date 25-03-2025 Organization Ivan Franko National University of Lviv popup.description1 The purpose of this project is to purposefully changing of the characteristics and properties of wide-bandgap gallium-containing materials and devices based on them, which includes establishing of relationships between obtaining conditions, doping, exposure to external factors and defective structure, electrical and luminescent characteristics popup.description2 Wide-bandgap gallium-containing oxides β-Ga2O3,AGa2O4(A=Ba, Mg), both nominally pure and activated with ions of transition metals (Cr, Mn) and rare-earth elements (Eu), were synthesized. Their main structural and physical parameters were determined. β-Ga2O3 nanocrystals were obtained using mechanical synthesis and characterized by XRD, SEM, EDX, AFM, and luminescence spectroscopy. The spectral and kinetic characteristics of single and polycrystals of β-Ga2O3-In2O3 and β-Ga2O3-Al2O3 solid solutions, activated with Cr3+ and Mn4+, were studied. Models of the luminescence centers of manganese ions were proposed. It was shown that in oxides based on β-Ga2O3, donors and acceptors are formed by intrinsic defects (Gai, VGa, VGaVO) and doping impurities (Mg2+, Ca2+, Zr4+, Cr3+). The synthesis atmosphere (O2, Ar) and the impurity type determine the electrical properties of the samples. The photoconductivity spectra of β-Ga2O3 and β-Ga2O3-In2O3 in the 230-800 nm wavelength range were studied. The correlations between the absorption and photoconductivity spectra in the UV spectral region were analyzed. Product Description popup.authors popup.nrat_date 2025-03-25 Close