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Information × Registration Number 0225U002915, (0124U004554) , R & D reports Title Innovative Solar Cells popup.stage_title Створення базової структури халькопіритової сонячної комірки Mo/CuInGaSe/ZnOS на нікелевій фользі та визначення її фотоелектричних характеристик Head Nazarov Oleksii M., Доктор фізико-математичних наук Registration Date 17-04-2025 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 Magnetron sputtering deposition (at a temperature not higher than 350⁰С) of the basic structure of a chalcopyrite Mo/CuInGaSe(CIGS)/ZnOS solar cell on a metal flexible substrate (nickel foil) and determination of the photovoltaic properties of the obtained CIGS films and incomplete solar cell structures of the Mo/CuInGaSe(CIGS)/ZnOS popup.description2 Stoichiometric semiconductor polycrystalline films of four-component compounds of the CuInxGaySe (CIGS) on glass, polyimide and nickel foil near the stoichiometric composition (Ga/(Ga+In) ratio is from 25% to 27%) with a band gap of 1.1 to 1.2 eV, which are used as effective light adsorbers, have been created. To improve the crystallinity and reduce the defectiveness of the films without significant heating of the substrate on which the film was deposited, pulse treatment with a flash lamp (Flash Lamp Annealing) was used in the millisecond range of exposure time. Processing modes were determined that made it possible to reduce the resistance of the film with an increase in the mobility of charge carriers in the material by almost three times. To form a solar cell on this material, so as not to destroy the near-surface layer of the adsorber when applying the next layer, which is a contact layer and also serves as an optical window for the Sun light, chemical deposition of cadmium sulfide, which is an environmentally hazardous compound, is usually used. In this regard, the project uses chemical deposition of ZnS and ZnOSN by layer-by-layer ion deposition, which allows obtaining very thin (4 -10 nm) layers that tightly cover the polycrystalline non-smooth surface of CIGS. Within the framework of the project, intermediate structures of solar cells such as Mo/CIGS/ZnS(ZnOSN)/Ni and Mo/CIGS/ZnS(ZnOSN)/ITO were created, where ITO is a transparent semiconductor contact. The manufactured structures made it possible to determine the electrical and photoelectric parameters of the ZnS buffer layers (ZnOSN) and the quality of the near-surface layer CIGS without the formation of a complete structure of the solar cell, which requires the application of two more layers of ZnO. Product Description popup.authors Dmytro O. Hrynko Vlasiuk Viktor M. Serhii V. Kondratenko Vitalii P. Kostylov Bogoslovska Alla B. Yurii V. Homeniuk Oleksii M. Nazarov Andrii V. Rusavskyi Ihor P. Tiahulskyi Kysil Dmytro V. popup.nrat_date 2025-04-17 Close