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Information × Registration Number 0225U003554, (0122U001956) , R & D reports Title Nanostructured metasurfaces for sensors and photovoltaics popup.stage_title Антистоксова і часо-роздільна спектроскопія для оцінки ефективності процесів на наноструктурованих метаповерхнях. Head Dmytruk Ihor M., Доктор фізико-математичних наук Registration Date 14-07-2025 Organization Taras Shevchenko National University of Kyiv popup.description1 Investigation of fundamental mechanisms of interaction of electromagnetic radiation with nanostructured metasurfaces of various types, including plasmon metasurfaces based on laser-structured metal or semiconductor surfaces and metal nanoparticles of various shapes or nanowires, to increase the efficiency of new hybrid sensors and photovoltaic elements. popup.description2 The relevance of the research work lies in the prospects for the use of laser-induced periodic surface structures (LIPS) in sensors and photovoltaics. The purpose of the work is to study the fundamental physical mechanisms of the formation of nanostructured metasurfaces (structures based on metals or semiconductors treated with femtosecond laser radiation with different wavelengths and different powers, and metal nanoparticles (NPs) of different shapes), their properties and interaction with electromagnetic (EM) radiation. The research work also has a certain applied aspect with an orientation towards application in sensors and photovoltaics. Within the framework of the presented research work, the physical nature and efficiency of the interaction of electromagnetic radiation with a substance placed in/on nanostructured metasurfaces based on various types of plasmonic metal, semiconductor and hybrid metal-semiconductor elements are investigated, where a highly localized amplification of the electromagnetic field is provided, as well as an amplification of the nonlinear optical response of the system. The main tasks of the work: 1. Theoretical, spectroscopic and photoelectric studies of metasurfaces to determine their optimal parameters for maximum plasmonic amplification of the EM field. 2. Use of the plasmonic amplification effect for the generation of electron-hole pairs due to multi-photon absorption of photons with energies smaller than the semiconductor band gap in model Si and GaAs elements. 3. Use of plasmon-stimulated generation of hot carriers in a semiconductor to increase the output power of a photovoltaic cell (PV). 4. Establishment of mechanisms of plasmon-enhanced photoluminescence (PL) and Raman scattering (Raman scattering) of organic molecules in the developed plasmonic metasurfaces. Product Description popup.authors Yeshchenko Oleh A. Bediukh Oleksandr R. Berezovska Nataliia I. Hrabovskyi Yevhen S. Mamykin Serhii V. Norenko Artem V. Pundyk Iryna P. Stanovyi Oleksandr P. Tomchuk Anastasiia V. Fedotov Oles Yu. Khort Pavlo S. popup.nrat_date 2025-07-14 Close