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Information × Registration Number 0226U000823, (0120U102512) , R & D reports Title Investigation of electrical, optical, magnetic and acoustic properties of newest semiconductor materials and nanostructures, promising for use in nanoelectronics, nanophotonics and nanoacoustics popup.stage_title Дослідження електричних, оптичних, магнітних та акустичних властивостей новітніх напівпровідникових матеріалів та наноструктур, перспективних для застосування в приладах наноелектроніки, нанофотоніки та наноакустики Head Bieliaiev Oleksandr Ye., Доктор фізико-математичних наукKochelap Vyacheslav Olexandrovych, Доктор фізико-математичних наук Registration Date 16-01-2026 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description1 Complex theoretical and experimental studies of electrical, optical, magnetic and acoustic properties of newest semiconductor nanomaterials and nanostructures that form the physical basis of new devices of nanoelectronics, nanophotonics and nanoacoustics, as well as spintronics and plasmonics popup.description2 Object of research. Electrical, optical, magnetic, and acoustic properties of advanced semiconductor materials and nanostructures that are promising for use in nanoelectronic, nanophotonic, and nanoacoustic devices. Aim of research. Comprehensive theoretical and experimental study of the electrical (including microwave), optical, magnetic, and acoustic properties of novel semiconductor materials and nanoscale structures that form the physical basis of new devices for nanoelectronics, nanophotonics, nanoacoustics, as well as spintronics and plasmonics, which represent modern, scientifically and technologically substantiated directions in the development of microelectronics, optoelectronics, and acoustoelectronics. As a result of the research, novel two-dimensional monolayer crystals, including graphene, wide-bandgap semiconductor materials, and heterostructures, namely, group III nitrides (GaN, AlGaN), oxide compounds, and diamond films, were investigated. New effects were obtained in nanoscale silicon layers, AIII–BV compound structures, wide-bandgap semiconductor diamond-based films, nanostructures, and novel two-dimensional crystals. New electronic phenomena were observed, including electron viscosity and plasma microwave effects in a two-dimensional electron gas drifting in an electric field. New approaches to the study and application of acousto-electric, acousto-magnetic, and terahertz effects were formulated. Experimental and theoretical investigations were carried out on heavily doped silicon n++–p+ diode structures developed for creating a new element base for semiconductor devices with improved performance. The developed structures demonstrated enhanced operational characteristics compared with known foreign analogs. A method for studying the kinetics of acoustically induced processes of dynamic current modification in semiconductor materials and nanostructures containing complex multicharged acoustoactive centers was developed and tested. Product Description popup.authors Liashchuk Yurii M. Strikha Maksym V. Naumov Vadym V. Sokolov Valerii M. Petro S. Smertenko Halyna I. Synhaivska Tymochko Mykola D. Yaroslav M. Olikh Yurii M. Nasieka Nina M. Roshchyna Ihor A. Koshets Yurii M. Shvarts Yurii S. Riabchenko Ihor O. Izmailov Mykola I. Boiko Viktor S. Rudzynskyi Vadym V. Korotieiev Andrii B. Aleinikov Zoia I. Kazantseva Olha V. Kulyk Mykola V. Sopinskyi Oksana M. Zakharenko Hrytsaienko Yaroslav O. Serhii M. Kukhtaruk Viktor A. Danko Vladyslav V. Kaliuzhnyi Soskin Stanislav M. Petro M. Kruhlenko Ihor I. Boiko Pipa Viktor Yo. Holenisheva Raisa A. Maryna M. Shvarts Oleh Э. Raichev Borblyk Vitaliy Leonidovych Olena V. Shynkarenko Halyna K. Sheka Valentyna H. Raicheva Hryhorii V. Milenin Kladko Vasil Petrovich Valentyna V. Ponomarenko Nina H. Berezynets Oksana Y. Horobei Tetiana L. Linnyk popup.nrat_date 2026-01-16 Close