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Registration Number

0226U000998, (0121U108038) , R & D reports

Title

Develop ing and e[ploring of the methods for creating highly sensitive sensors based on nanostructured metallic and semiconductor materials.

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Розробити та дослідити методи створення високочутливих сенсорів на основі наноструктурованих металічних і напівпровідникових матеріалів

Head

Rubish Vasyl M., д.ф.-м.н.

Registration Date

19-01-2026

Organization

Institute for Information Recording NASU

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The purpose of this work is a complex study and development of methods for creating on the basis of nanostructured metal and chalcogenide films of highly sensitive optical and electrical sensors for the detection of toxic and biologically active substances.

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Within the R&D project, a comprehensive study of nominally pure and heavy-metal-modified chalcogenide films and planar structures of the “metal layer – chalcogenide film – metal layer” type was carried out in order to develop highly sensitive optical and electrical sensors for the detection of toxic and biologically active substances. A review of up-to-date scientific and technical literature was performed, focusing on preparation methods, structure, and properties of various allotropic modifications of selenium and tellurium, as well as heavy-metal selenides and tellurides. Using X-ray diffractometry and Raman spectroscopy, the structure of Se and Te films before and after mercury modification was investigated; it was established that the phase formed within their structural network after exposure to Hg vapors corresponds to the crystal structure of mercury selenide and mercury telluride. It was shown that mercury modification of amorphous selenium films causes a drastic decrease in electrical resistance by 5–6 orders of magnitude, while the latent period during which the electrical parameters of planar structures remain stable lasts several tens of minutes. The transition from the high-resistance state to the low-resistance state was characterized, demonstrating that both the switching time and the transition interval decrease with increasing mercury concentration and ambient temperature. The formation of surface relief gratings in amorphous Se films after exposure to Hg vapors was also examined, and it was found that increasing the exposure time leads to higher grating growth rate and amplitude, thereby creating prerequisites for improving the sensitivity of sensor structures.

Product Description

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Mykhaylo M. Pop
Hasynets Stepan Mykhailovych
Trynov Mykhailo L.
Durkot Myron O.
Makar Larysa I.
Yasinko Tamara I.
Pisak Roman P.
Buletsa Petro K.
Tarnay Andrii A.

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2026-01-19