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Information × Registration Number 0226U002131, (0125U000295) , R & D reports Title Innovative materials for quantum sensing popup.stage_title Теоретичні розрахунки та розробка технологій формування плівкових структур Head Kordiuk Oleksandr A., Доктор фізико-математичних наук Registration Date 09-02-2026 Organization Institute of Metal Physics. G.V. Kurdyumov of the National Academy of Sciences of Ukraine popup.description1 The aim of the work is to combine the experience of our previous research, well-established international cooperation and advanced experimental facilities to develop the physical foundations of the technology for creating innovative quantum materials with improved characteristics necessary for the development of quantum technologies, in particular for the development of single-photon detectors, Josephson contacts, superconducting and spin gates, magnetic field sensors, and memory elements. popup.description2 The obtained results confirm the strong potential of thin MoSi films and microstructures based on them for the development of superconducting resonators and sensitive elements for quantum devices. The influence of disorder on the superconducting properties of Mo–Re alloys has been analyzed, demonstrating the limited possibility of enhancing the superconducting critical temperature ?? in Mo–Re alloys through increasing disorder. For the first time, the temporal relaxation of right- and left-polarized magnons under the action of an electric field due to the Aharonov–Casher effect has been investigated, and a controllable difference in their damping has been demonstrated. Based on fully relativistic DFT/DFT+U calculations, fundamental insights into the electronic and magnetic properties of materials based on 5? transition metals have been obtained, and a band-structure interpretation of their RIXS spectra has been provided. The Mott-insulating nature of the iridates Ba3InIr2O9 and Ba5AlIr2O11, as well as the likely excitonic-insulator ground state of Ta2NiSe5, has been established. Heusler alloys with high spin polarization suitable for spintronic applications have been theoretically identified, and the effects of atomic disorder and substrate roughness on the magnetic and transport properties of thin-film structures have been investigated, providing a foundation for the further development of quantum electronics and spintronics. A patent search has been performed. Product Description popup.authors Oleksandr M. Hrypachevskyi Lev V. Bekenov Viktor M. Antonov Volodymyr Y. Tarenkov Valery Y. Lyakhno Yurii V. Kudriavtsev Denys О. Kukusta Vladimir I. Shnyrkov Viacheslav V. Zahorodnii Tetiana O. Monastyrska Oleksii A. Kaleniuk Olexandr I. Plyushchay Viktor M. Uvarov Shaternik Volodymyr Evgenovych Lazorenko Yaroslav P. Oleksandr L. Kasatkin Olha O. Boliasova Kim A. Teush Viktor V. Tykhonovych Matsuy Volodymyr I Yurii M. Kucherenko Dmytro V. Mazur Futymskyi Serhii I. Viktor S. Flis Mykola V. Uvarov Ihor O. Martynenko Serhii A. Bespalov Maryna V. Nemoshkalenko Halyna I. Kovalchuk Havrysh Ivan H Vadym P. Tsvitkovskyi Mykolai M. Dukhnevych Halyna V. Kondakova Mishchenko Evgen Romanenko Valentin Valentyna L. Makivska Andrii P. Shapovalov Kozyreva Yuliia I. Maxim P. Melnik Oleksandra S. Sukhanevych Volodymyr O. Makivskyi Vasyl M. Bevz popup.nrat_date 2026-02-09 Close