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Information × Registration Number 0226U003282, (0125U001768) , R & D reports Title Development of principles of formation of properties of ultra-wide bandgap semiconductors based on Ga2O3 for power electronics and UV optoelectronics popup.stage_title Одно- та двох заміщені тверді розчини на основі β-Ga2O3: одержання, кристалічна структура та термічне розширення. Head Vasylechko Leonid O., Доктор хімічних наук Registration Date 25-03-2026 Organization Lviv Polytechnic National University popup.description1 Searching for and establishing the possibilities of controlled modification of the crystal structure, optical and electronic properties of wide-bandgap oxide semiconductors by single- and multi-cationic substitution of different crystallographic positions in the structure of b-Ga2O3 and lithium-gallium spinel based on the synthesis of new compounds and a comprehensive experimental and theoretical study of the relationship between their atomic structure and band structure. popup.description2 The project aims to find and establish opportunities for controlled modification of the electronic properties of complex oxide functional materials with a beta-Ga2O3 and spinel structure, whose crystal structure is formed by octahedral and tetrahedral oxygen polyhedra, through cation substitution in sublattices. The multidisciplinary research involves the synthesis of new solid solution compounds, precise determination of crystal structure parameters using X-ray diffraction methods, ab initio calculations of interatomic interactions and energy spectrum, and optical and luminescent methods of experimental investigation of electronic properties. The project will lay the groundwork for the production of ultra-wideband semiconductors with hole conductivity and structures with p-n junctions for modern power electronics, as well as phosphors for various applications. Product Description popup.authors Sergii Ubizskii Iryna Lutsiuk Olga Pekinchak Ihor Syvorotka Svitlana Turchak Vasyl Hreb popup.nrat_date 2026-03-25 Close