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Information × Registration Number 0299U000398, 0196U009478 , R & D reports Title Theoretical and Experimental Fundamental of the New SiC-based Semiconductor Devices Creation popup.stage_title Head Altajs'kyj Yurij Mykhajlovych, Registration Date 04-03-1999 Organization National Technical University of Ukraine "Kiev Polytechnic Institute" popup.description2 The aim consists in developing the theoretical and experimental fundamental of the SiC-based photo- and lightdiodes creation. A model of a current flow in threelayer diode structures has been developed. On its basis the experimental results, have been analysed. The detail analysis of a photodiode regime of the wideband semiconductor - based structures operation has been carried out. The nonemittig exciton annihilation appreciate influence on a brightness and an edge emission quantum output has been found. Product Description popup.authors popup.nrat_date 2020-04-03 Close