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Information × Registration Number 0299U000758, 0196U014051 , R & D reports Title Recombination and ion processes in strained semiconductor on III-V compounds. popup.stage_title Head Ptashchenko O.O., Registration Date 09-04-2001 Organization Odessa I.I.Mechnikov's national Universitu popup.description2 Effect of current, temperature and uniaxial pressure was studied on electrical characteristics the intensity ,polarization and transient characteristics of the electroluminescence ,as well on degradation processes in GaAs-AlGaAs laser heterostructures /LHS/. The features of I-V characteristics, decay curves of the electroluminescence ,"excess"polarization of the spontaneous emission, polarization of the laser emission, related to inhomogeneities and mechanical strain in LHS ,as well as their degradation, have been established . Some techniques for an estimation of inhomogeneities and elastic deformations in LHS are proposed. The possibility of an application of LHS as temperature- and pressure-sensors in shown. Product Description popup.authors popup.nrat_date 2020-04-02 Close